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US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Nov. 3 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,370, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taip... Read More


US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on Nov. 3 for "Tunneling field effect transistor having buried drain structure" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,371, issued on Nov. 3, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea). "Tunne... Read More


US Patent Issued to Silicon Quantum Computing on Nov. 3 for "Quantum processing system" (Australian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,372, issued on Nov. 3, was assigned to Silicon Quantum Computing Pty Ltd. (Kensington, Australia). "Quantum processing system" was invented ... Read More


US Patent Issued to SHINDENGEN ELECTRIC MANUFACTURING on Nov. 3 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,373, issued on Nov. 3, was assigned to SHINDENGEN ELECTRIC MANUFACTURING Co. LTD. (Tokyo). "Semiconductor device" was invented by Azusa Sato... Read More


US Patent Issued to NANYA TECHNOLOGY on Nov. 3 for "Semiconductor device with top dielectric layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,374, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with top dielectric layer and... Read More


US Patent Issued to Wolfspeed on Nov. 3 for "Edge termination for power semiconductor devices and related fabrication methods" (North Carolina Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,375, issued on Nov. 3, was assigned to Wolfspeed Inc. (Durham, N.C.). "Edge termination for power semiconductor devices and related fabricat... Read More


US Patent Issued to IceMos Technology on Nov. 3 for "Semiconductor device and method of forming MOSFET optimized for R DSON and/or C OSS" (Japanese, American Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,376, issued on Nov. 3, was assigned to IceMos Technology Ltd. (Great Britain). "Semiconductor device and method of forming MOSFET optimized ... Read More


US Patent Issued to DB HITEK on Nov. 3 for "Pillar structure including branched upper peripheral pillars and super junction semiconductor device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,377, issued on Nov. 3, was assigned to DB HITEK Co. LTD. (Gangnam-gu, South Korea). "Pillar structure including branched upper peripheral pi... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor device and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,379, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method for f... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device structure and methods of forming the same" (Belgian Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,380, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure an... Read More